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| KS Series |
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Technology
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90nmCMOS 6/7/8/9 Layer Metal |
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Performance
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22ps(2 input NANDゲート、F.O＝2) |
Power
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0.0015uW/MHz/gate （standard condition） |
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Supply Voltage
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core
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1.0V |
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I/O
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3.3V, 3.0V, 2.5V |
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Parameter
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Symbol
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Ratings |
unit |
| Supply Voltage
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VDD
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−0.3 ~ 4.0(VDDH）, -0.5 ~ 1.6(VDD) |
V |
| Input Voltage |
VIN
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−0.3 ~ VDDH＋0.3 |
V |
DC Output Current
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IOUT
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±15(12mA buffer) |
mA |
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Storage Temperature
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TSTG
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−65 ~ 150（ceramic） |
℃ |
| −55 ~ 125（plastic） |
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| Recommended Operating Condition |
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Parameter
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Symbol
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Ratings |
unit |
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Supply Voltage
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VDD
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3.0 ~ 3.6（3.3V）, 2.7 ~ 3.3（3.0V）, 2.3 ~ 2.7（2.5V）, 0.9 ~ 1.1（1.0V） |
V |
Operating Temperature
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TA
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0 ~ 70, −40 ~ 85 |
℃ |
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Single Port RAM
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Sync |
max 640Kbit/block, 2 ~ 160bit, 16 ~ 16K word （1R/W） |
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Sync
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High Speed Version, max 1280Kbit/block, 4 ~ 320bit, 16 ~ 16K word （1R/W） |
Sync |
Compact Version, max 32Kbit/block, 2 ~ 128bit, 8 ~ 512 word (1R/W) |
Dual Port RAM |
Sync
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max 320Kbit/block, 2 ~ 160bit, 64 ~ 16K word （2R/W） |
2 Port RAM |
Sync
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max 36Kbit/block, 2 ~ 144bit, 4 ~ 1K word （1R/1W） |
ROM |
Sync |
max 512Kbit/block, 2 ~ 128bit, 64 ~ 8K word (1R) |
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