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| KS Series |
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Technology
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0.25um CMOS 5 Layer Metal |
Performance
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70ps（2 input NAND gate、F.O.＝2） |
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Power
|
0.020uW/MHz/gate （standard condition） |
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Supply Voltage
|
core |
2.5V |
|
I/O |
3.3V, 3.0V, 2.5V |
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Parameter
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Symbol
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Ratings |
unit |
Supply Voltage
|
VDD |
−0.3 ~ 4.0（3.3V, 3.0V）, −0.3 ~ 3.1（2.5V） |
V |
| Input Voltage |
VIN |
−0.3 ~ VDD＋0.3, −0.3 ~ 5.6（5V Tolerant, Power
On） |
V |
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DC Output Current
|
IOUT |
±30（24mA buffer） |
mA |
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Storage Temperature
|
TSTG |
−65 ~ 150（ceramic） |
℃ |
| −55 ~ 125（plastic） |
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| Recommended Operating Condition |
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Parameter
|
Symbol
|
Ratings |
unit |
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Supply Voltage
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VDD |
3.0 ~ 2.6（3.3V）, 2.7 ~ 3.3（3.0V）, 2.3 ~ 2.7（2.5V） |
V |
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Operating Temperature
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TA |
0 ~ 70, −40 ~ 85 |
℃ |
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Single Port RAM |
A sync |
max 288Kbit/block, 2 ~ 72bit, 16 ~ 16K word (1R/W) |
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Sync |
max 288Kbit/block, 2 ~ 72bit, 16 ~ 16K word (1R/W) |
Dual Port
RAM |
A sync |
max 72Kbit/block, 2 ~ 72bit, 32 ~ 8K word （2R/W） |
Sync
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max 72Kbit/block, 2 ~ 72bit, 32 ~ 8K word （2R/W） |
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2 Port RAM
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Sync
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max 18Kbit/block, 4 ~ 72bit, 8 ~ 256 word （1R1W） |
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ROM |
Sync
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max 512Kbit/block, 2 ~ 64bit, 128 ~ 32K word (1R) |
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