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| KS Series |
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KS4000H |
KS4000M |
Technology |
0.35um CMOS 4 Layer Metal |
Performance
|
110ps（2 input NAND gate, F.O.＝2） |
Power
|
0.05uW/MHz/gate （standard condition） |
|
Supply Voltage
|
core |
3.3V, 3.0V, 2.5V |
3.3V, 3.0V, 2.5V |
|
I/O |
3.3V, 3.0V, 2.5V |
5.0V, 3.3V, 3.0V |
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Parameter
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Symbol
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Ratings |
unit |
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Supply Voltage
|
VDD |
−0.3 ~ 5.6V（5.0V）, −0.3 ~ 3.8（3.3, 3.0, 2.5V） |
V |
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Input Voltage
|
VIN |
−0.3 ~ VDD＋0.3, −0.3 ~ 5.6（5V Tolerant, Power
On） |
V |
|
DC Output Current
|
IOUT |
±30（24mA buffer） |
mA |
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Storage Temperature
|
TSTG |
−65 ~ 150（ceramic） |
℃ |
| −55 ~ 125（plastic） |
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| Recomended Operating Condition |
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Parameter
|
Symbol
|
Ratings |
unit |
Supply Voltage
|
VDD |
4.5 ~ 5.5, 4.75 ~ 5.25（5.0V）, 3.0 ~ 3.6（3.3V）, 2.7 ~ 3.3（3.0V）, 2.3 ~ 2.7（2.5V） |
V |
Operating Temperature
|
TA |
0 ~ 70, −40 ~ 85 |
℃ |
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Single Port RAM
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A sync
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max 72Kbit/block, 8 ~ 36bit, 16 ~ 2K word (1R/W) |
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Sync
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max 144Kbit/block, 4 ~ 36bit, 32 ~ 8K word (1R/W) |
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2 Port RAM
|
A sync
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max 16Kbit/block, 2 ~ 32bit, 64 ~ 2K word （1R1W） |
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ROM |
Sync
|
max 128Kbit/block, 4 ~ 64bit, 64 ~ 4K word (1R) |
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