製品紹介

 KG Series
KG500シリーズ
  General Characteristics
Technology
0.18um CMOS 5/6 Layer Metal
Performance
40ps(2 input NAND gate、F.O.=2)
Power
0.010uW/MHz/gate (standard condition)
Supply Voltage
core
1.8V
I/O
3.3V, 3.0V
  Absolute Maximum Ratings
Prameter
Symbol
Ratings unit
Supply Voltage
VDD
−0.3 ~ 4.0(3.3V、3.0V)、−0.3 ~ 2.2(1.8V) V
Input Voltage
VIN
−0.3 ~ VDD+0.3、−0.3 ~ 5.6(5V Tolerant,Power On) V
DC Output Current
IOUT
±30(24mA buffer) mA
Storage Temperature
TSTG
−65 ~ 150(ceramic)
−55 ~ 125(plastic)
  Recomended Operating Condition
Parameter
Symbol
Ratings unit
Supply Voltage
VDD

3.0 ~ 3.6(3.3V)、2.7 ~ 3.3(3.0V)、1.65 ~ 1.95(1.8V)

V
Operating Temperature
TA
0 ~ 70、−40 ~ 85
  Memory Embedded Type
Single Port RAM
Async
 max 288Kbit/block、2 ~ 72bit、16 ~ 16K word (1R/W)
Sync
 max 288Kbit/block、2 ~ 72bit、16 ~ 16K word (1R/W)
Sync
 High Speed Version, max 512Kbit/block、2 ~ 128bit、16 ~ 8K word (1R/W)
Sync
 High Density Version, max 512Kbit/block, 2 ~ 128bit, 256 ~ 16K word (1R/W)
Sync
 Compact Version, max 64Kbit/block, 2 ~ 64bit, 16 ~ 4K word (1R/W)
Dual Port RAM
Async
 max 72Kbit/block、2 ~ 72bit、32 ~ 8K word (2R/W)
Sync
 max 72Kbit/block、2 ~ 72bit、32 ~ 8K word (2R/W)
Sync
 High Speed Version, max 512Kbit/block、2 ~ 128bit、16 ~ 8K word (2R/W)
2 Port RAM
Sync
 max 64Kbit/block、4 ~ 128bit、8 ~ 1K word (1R1W)
ROM
Sync
 max 512Kbit/block、2 ~ 64bit、128 ~ 32K word (1R)