 |
 |
|
|
Technology |
0.35um CMOS 3 Layer Metal |
Performance
|
115ps（2 input NAND gate、F.O.＝2） |
|
Power
|
0.06uW/MHz/gate （standard condition） |
|
Supply Voltage
|
core |
3.3V, 3.0V |
|
I/O |
3.3V, 3.0V |
|
|
|
|
Parameter
|
Symbol
|
Ratings |
unit |
|
Supply Voltage
|
VDD |
−0.3 ~ 4.0 |
V |
| Input Voltage
|
VIN |
- 0.3 ~ VDD＋0.3、−0.3 ~ 6.0（5V Tolerant,Power
On） |
V |
|
DC Output Current
|
IOUT |
±15（12mA buffer） |
mA |
|
Storage Temperature
|
TSTG |
−65 ~ 150（ceramic） |
℃ |
| −55 ~ 125（plastic） |
|
|
| Recommended Operating Condition |
|
|
Parameter
|
Symbol
|
Ratings |
unit |
Supply Voltage
|
VDD |
3.0 ~ 3.6, 2.7 ~ 3.6 |
V |
|
Operating Temperature
|
TA |
0 ~ 70、−40 ~ 85 |
℃ |
|
|
|
Single Port RAM |
Sync |
max 256Kbit/block、2 ~ 64bit、16 ~ 16K word (1R/W) |
Sync |
High Speed Version max 64Kbit/block, 2 ~ 64 bit, 16 ~ 4K word (1R/W) |
|
Dual Port RAM
|
Sync
|
max 64Kbit/block、2 ~ 64bit、16 ~ 4K word （2R/W） |
|
ROM |
Sync
|
max 512Kbit/block、2 ~ 64bit、64 ~ 32K word (1R) |
|
|
|
